Description
The ABB 3BHE009681R0101 is an Insulated-Gate Bipolar Transistor (IGCT) module.
The IGCT module is a type of power electronic device that combines the characteristics of a bipolar junction transistor (BJT) and a field-effect transistor (FET). This combination results in a device that has the high current handling capability of a BJT and the high input impedance of a FET.
- Colossal current handling (1150A)
- Rugged construction
- Integrated intelligence (embedded gate driver)
- Space-saving efficiency
- Unwavering reliability (advanced protection safeguards)
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